Nb6 Te6 As2 — Properties & Data | MatWorld

Nb6 Te6 As2

semiconductor

· Nb6 Te6 As2

Nb₆Te₆As₂ is a ternary chalcogenide semiconductor compound combining niobium, tellurium, and arsenic in a layered crystal structure. This material remains largely in the research phase, with interest driven by its potential for thermoelectric applications, topological electronic properties, and niche optoelectronic devices where the combination of heavy elements and layered bonding can enable tunable band structure and carrier mobility.

experimental thermoelectric materialstopological semiconductor researchhigh-temperature electronicsquantum material studieslayered semiconductor researchniche optoelectronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01560	eV	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5150	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Nb6 Te6 As2

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control