Nb₆Te₂I₁₄ is an experimental layered semiconductor compound combining niobium, tellurium, and iodine—a member of the halide perovskite and metal chalcohalide family. This material is primarily of research interest for next-generation optoelectronic and photovoltaic devices, where its layered structure and tunable band gap offer potential advantages in light absorption, charge transport, and stability compared to conventional halide perovskites. Engineers investigating alternative semiconductor platforms for solar cells, photodetectors, or light-emitting applications may evaluate this compound as a candidate material, though it remains largely in the exploratory phase and is not yet deployed in commercial products.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,394.6 | ksi | — | ||
Shear Modulus(G) | 2,865.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01640 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5640 | eV/atom | — |