Nb6Ir2Se16 is a layered ternary chalcogenide semiconductor compound combining niobium, iridium, and selenium in a mixed-valence framework. This is a research-phase material studied primarily for its unique electronic structure and potential thermoelectric or topological properties rather than established industrial production. Interest in this compound family stems from the combination of transition metals with selenium, which can yield anisotropic conductivity, low thermal conductivity, and tunable band structures—characteristics valuable for next-generation energy conversion and quantum devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00440 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7170 | eV/atom | — |