Nb₅Te₄ is a niobium telluride compound belonging to the transition metal chalcogenide family, characterized by a layered crystal structure and narrow bandgap semiconductor behavior. This material is primarily of research interest for next-generation electronic and optoelectronic devices, with potential applications in thermoelectric energy conversion and low-dimensional quantum materials. Nb₅Te₄ represents an emerging class of materials being explored as alternatives to conventional semiconductors in specialized applications where its unique electronic band structure and anisotropic properties offer advantages over graphene or conventional III-V semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000600 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.3310 | eV/atom | — |