Nb₄W₂O₁₆ is a mixed-metal oxide semiconductor composed of niobium and tungsten in a layered perovskite-related structure. This compound belongs to the family of transition-metal oxides studied for photoelectric and electrochemical applications, where the combination of two d-block metals creates favorable band-gap properties and catalytic activity. While primarily a research material rather than a commodity engineering material, Nb₄W₂O₁₆ shows promise in photocatalysis and ion-transport applications where the synergistic effects of niobium and tungsten oxides can be exploited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.841 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.368 | eV/atom | — |