Nb4Te4I12 is a layered mixed-halide semiconductor compound combining niobium, tellurium, and iodine, belonging to the family of low-dimensional transition metal chalcohalides. This material is primarily of research interest rather than established industrial use, explored for potential applications in optoelectronics and quantum materials due to its layered crystal structure and tunable electronic properties. Engineers and materials scientists investigate compounds in this family as candidates for next-generation photovoltaics, photodetectors, and excitonic devices where layered geometry and mixed-anion composition can enable band-gap engineering and enhanced light-matter interaction.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00900 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4590 | eV/atom | — |