Nb4Se6 is a layered transition metal chalcogenide semiconductor compound combining niobium and selenium in a 4:6 stoichiometric ratio. This material belongs to the family of quasi-2D semiconductors and is primarily of research interest for next-generation electronic and optoelectronic devices, where its layered crystal structure and tunable bandgap offer potential advantages over graphene and traditional bulk semiconductors in applications requiring flexibility, layer-dependent properties, or enhanced light-matter interaction.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00940 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8700 | eV/atom | — |