Nb4S12 is a layered transition metal sulfide semiconductor compound combining niobium and sulfur in a well-defined stoichiometric ratio. This material belongs to the family of metal dichalcogenides and is primarily of research interest for its potential in electronic and optoelectronic applications, where its layered crystal structure offers tunable electronic properties similar to other 2D materials. While not yet widely deployed in commercial products, Nb4S12 and related niobium sulfides are investigated for photodetectors, field-effect transistors, and energy storage devices due to their semiconducting nature and potential for exfoliation into thin layers.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,318 | ksi | — | ||
Shear Modulus(G) | 4,625.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.07760 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8670 | eV/atom | — |