Nb4O4F12 is an experimental oxyfluoride semiconductor compound containing niobium, oxygen, and fluorine, representing a class of mixed-anion materials being investigated for advanced electronic and photonic applications. This compound belongs to the niobium oxide fluoride family, which is primarily of research interest for next-generation device materials, particularly in areas where conventional semiconductors face limitations due to their optical or electronic properties. The incorporation of fluorine into niobium oxide frameworks creates materials with potential for tunable band gaps and enhanced ionic conductivity, making them candidates for emerging technologies in solid-state electronics and optical devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,114.3 | ksi | — | ||
Shear Modulus(G) | 1,842 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.560 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.977 | eV/atom | — |