Nb₃Te₆ is a layered transition metal chalcogenide semiconductor compound composed of niobium and tellurium. This material is primarily of research interest for its potential in two-dimensional (2D) electronics and optoelectronics, where its layered crystal structure enables mechanical exfoliation and integration into van der Waals heterostructures. The material is notable within the broader family of metal chalcogenides for investigating novel electronic transport phenomena and potential applications in next-generation semiconductor devices, though it remains largely in the experimental stage without widespread industrial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 43.20 | GPa | — | ||
Shear Modulus(G) | 27.72 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000900 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4530 | eV/atom | — |