Nb2Tl4S11
semiconductorNb₂Tl₄S₁₁ is a ternary chalcogenide semiconductor compound combining niobium, thallium, and sulfur. This is a research-phase material studied primarily for its electronic and optical properties within the broader family of metal sulfide semiconductors, rather than an established commercial material. Potential applications lie in thin-film photovoltaics, photodetectors, and thermoelectric devices where layered chalcogenide structures can offer tunable band gaps and low-dimensional electronic behavior; however, engineering adoption remains limited due to the material's early development stage, thallium's toxicity constraints, and the need for further characterization of synthesis scalability and environmental stability.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf) | — | eV/atom | — | — |