Nb₂V₂O₁₀ is a mixed-metal oxide semiconductor composed of niobium and vanadium in a 1:1 ratio, belonging to the family of transition metal oxides studied for electrochemical and photocatalytic applications. This material is primarily investigated in research contexts for energy storage, photocatalysis, and sensing applications, where the combination of two transition metals enables tunable electronic properties and enhanced catalytic activity compared to single-metal oxide alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.762 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.590 | eV/atom | — |