Nb2 Tl5 S4 Br9

semiconductor

· Nb2 Tl5 S4 Br9

Nb₂Tl₅S₄Br₉ is a mixed-halide chalcogenide semiconductor compound combining niobium, thallium, sulfur, and bromine elements. This is an experimental research material rather than an established commercial material, belonging to the family of layered halide perovskites and chalcogenide semiconductors being investigated for next-generation optoelectronic and photovoltaic applications. The incorporation of multiple halide and chalcogenide anions creates tunable band gap structures and potentially unique electronic properties relevant to thin-film device engineering, though practical applications remain in early laboratory stages.

Experimental semiconductor researchThin-film photovoltaicsOptoelectronic devicesBand gap engineeringMaterials characterization studiesNext-generation solar cells

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.620	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.8980	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Nb2 Tl5 S4 Br9

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control