Nb2 Te8 I12

semiconductor

· Nb2 Te8 I12

Nb2Te8I12 is a mixed-halide layered semiconductor compound combining niobium, tellurium, and iodine in a complex structure. This material belongs to the family of transition metal chalcohalides and is primarily of research and developmental interest rather than established commercial production. The compound shows promise for next-generation optoelectronic and photovoltaic applications due to its tunable bandgap and layered crystal structure, which enables efficient charge transport; however, it remains largely in the experimental stage as researchers explore its stability, scalability, and performance relative to more mature semiconductor alternatives like perovskites and traditional III-V compounds.

emerging photovoltaic materialsoptoelectronic devicesexperimental semiconductorslayered material researchnext-generation solar cellsquantum materials exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	12.26	GPa	—
Shear Modulus(G)	5.913	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02820	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.2340	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Nb2 Te8 I12

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control