Nb₂Si₂As₂ is a ternary intermetallic semiconductor compound combining niobium, silicon, and arsenic in a layered crystal structure. This is a research-phase material studied primarily for its electronic properties in the semiconductor and thermoelectric materials families, rather than an established commercial product. Interest in this material stems from potential applications in high-temperature electronics and energy conversion where ternary silicide-arsenides offer alternative band structures compared to binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 147.2 | GPa | — | ||
Shear Modulus(G) | 96.01 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00510 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5330 | eV/atom | — |