Niobium diselenide (Nb₂Se₄) is a layered transition metal chalcogenide semiconductor belonging to the family of two-dimensional materials with anisotropic crystal structure. This compound is primarily investigated in materials research for next-generation electronics and energy applications, where its semiconducting properties and layer-dependent behavior make it attractive as an alternative to commercially established materials like MoS₂ for field-effect transistors, photodetectors, and catalytic devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,556.5 | ksi | — | ||
Shear Modulus(G) | 4,583.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01200 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8630 | eV/atom | — |