Niobium diselenide (Nb₂Se₄) is a layered transition metal chalcogenide semiconductor belonging to the family of two-dimensional materials with anisotropic crystal structure. This compound is primarily investigated in materials research for next-generation electronics and energy applications, where its semiconducting properties and layer-dependent behavior make it attractive as an alternative to commercially established materials like MoS₂ for field-effect transistors, photodetectors, and catalytic devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,556.5 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 4,583.2 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01200 | eV | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.8630 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data