Niobium disulfide (Nb₂S₂) is a layered transition metal dichalcogenide semiconductor belonging to the family of two-dimensional materials with potential for electronic and optoelectronic applications. This compound is primarily of research and developmental interest rather than established in high-volume production, with investigation focused on its semiconducting properties, layer-dependent behavior, and potential use in next-generation nanoelectronics where its structural characteristics could offer advantages in device miniaturization and heterojunction engineering.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25,902.1 | ksi | — | ||
Shear Modulus(G) | 15,387.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00110 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9850 | eV/atom | — |