Nb₂N₂O₂ is an experimental oxynitride semiconductor compound combining niobium, nitrogen, and oxygen elements. This material belongs to the mixed-anion ceramic family and is primarily of research interest for its potential in photocatalysis, energy conversion, and electronic applications where band gap engineering is desirable. While not yet established in mainstream industrial production, oxynitride semiconductors like this are being investigated as alternatives to traditional oxides and nitrides due to their tunable electronic properties and potential for enhanced catalytic performance in environmental remediation and energy harvesting systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 28,586.9 | ksi | — | ||
Shear Modulus(G) | 9,810.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.026 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.725 | eV/atom | — |