Nb₂I₆ is a layered transition metal halide semiconductor composed of niobium and iodine, belonging to the family of van der Waals materials that exhibit quasi-2D electronic structure. This compound is primarily investigated in academic and early-stage research contexts for optoelectronic and photonic applications, where its tunable bandgap and strong light-matter interactions make it a candidate for next-generation devices; however, it remains largely experimental with limited industrial deployment compared to established semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00110 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.4480 | eV/atom | — |