Nb1 V1 O4
semiconductorNb₁V₁O₄ is a mixed-metal oxide semiconductor compound combining niobium and vanadium in a 1:1 stoichiometry. This material belongs to the family of transition-metal oxides and is primarily studied in research contexts for photocatalytic and electrochemical applications, where its semiconductor properties and mixed-valence character enable catalytic activity under visible light or electrochemical bias. While not yet widely deployed in commercial products at scale, NbVO₄ and related niobium-vanadium oxide compounds show promise as alternatives to conventional photocatalysts like TiO₂ because of their narrow bandgap and enhanced charge separation, making them candidates for environmental remediation and energy conversion applications as research matures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |