Nb1 Tl1 O3

semiconductor

· Nb1 Tl1 O3

Nb₁Tl₁O₃ is an experimental mixed-metal oxide semiconductor combining niobium and thallium in a perovskite-related structure. This compound belongs to the family of complex metal oxides under investigation for potential applications in functional electronics and photonics, where its semiconducting properties and crystal structure are of primary research interest. While not yet established in mainstream industrial production, materials in this compositional space are explored for their dielectric, optical, and electronic properties in next-generation device architectures.

Research and developmentOxide semiconductorsPhotonic materialsThin-film electronicsFerroelectric device researchMaterials discovery

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	26,290.6	ksi	—
Shear Modulus(G)	14,608.2	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.3049	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.158	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Nb1 Tl1 O3

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control