Nb1S1 is a layered transition metal dichalcogenide semiconductor compound combining niobium and sulfur, representing an emerging class of two-dimensional and quasi-2D materials under active research. This material is investigated primarily for its electronic and optoelectronic properties in next-generation devices, where its layered crystal structure enables tunability and integration into flexible or van der Waals heterostructure platforms. Compared to conventional semiconductors, Nb1S1 offers potential advantages in ultrathin device fabrication, chemical sensing, and photocatalytic applications, though it remains largely in the research and development phase rather than high-volume industrial production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 178.3 | GPa | — | ||
Shear Modulus(G) | 97.37 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00150 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.9690 | eV/atom | — |