Nb1 In1 S2

semiconductor

· Nb1 In1 S2

Nb₁In₁S₂ is a ternary layered semiconductor compound combining niobium, indium, and sulfur in a 1:1:2 stoichiometry. This material belongs to the family of transition metal dichalcogenides and is primarily of research interest for its potential in two-dimensional electronics, optoelectronics, and quantum applications rather than established industrial production. The compound's layered structure and semiconducting properties make it a candidate for exploring novel device architectures in emerging technologies where tailored band structure and reduced dimensionality offer advantages over conventional semiconductors.

2D electronics researchOptoelectronic devices (exploratory)Quantum computing (emerging)Thin-film transistors (research phase)Van der Waals heterostructuresPhotocatalysis research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	9,193.8	ksi	—
Shear Modulus(G)	5,049.2	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.05690	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.9630	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Nb1 In1 S2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control