Nb1 Bi3 O7
semiconductorNb₁Bi₃O₇ is a ternary oxide semiconductor compound combining niobium and bismuth in a layered perovskite-related crystal structure. This material is primarily of research interest for photocatalytic and optoelectronic applications, particularly in visible-light-driven catalysis and ferroelectric device development, where its mixed-valence transition metal composition and tunable bandgap offer advantages over single-component oxides. Engineers evaluating this compound should note it remains largely experimental; adoption depends on scalable synthesis routes and demonstrating performance gains in specific applications like water splitting or environmental remediation compared to established alternatives such as TiO₂ or BiVO₄.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |