Nb₁Ag₁O₃ is an experimental mixed-metal oxide semiconductor combining niobium and silver in a perovskite-related structure. This compound belongs to the family of complex metal oxides being investigated for photocatalytic and electronic applications where the dual-metal composition can create engineered bandgaps and enhanced charge transport compared to single-metal alternatives. As a research-phase material, it has not yet seen widespread commercial deployment but represents the growing class of designer semiconductors developed for next-generation energy conversion and environmental remediation technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 28,480.6 | ksi | — | ||
Shear Modulus(G) | 13,085.3 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.426 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.909 | eV/atom | — |