NaTaOFN is an oxynitride semiconductor compound containing sodium, tantalum, oxygen, and nitrogen elements. This material belongs to the family of transition metal oxynitrides, which are of research interest for photocatalytic and electronic applications. While primarily investigated in academic and development settings rather than established high-volume industrial production, oxynitride semiconductors like this are explored for their potential to enable more efficient light absorption and charge transport compared to conventional oxide ceramics, making them candidates for next-generation energy conversion and environmental remediation technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.700 | eV | — | ||
Magnetic Moment(μB) | 2.499e-15 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3800 | eV/atom | — |