NaNbO₂S is an experimental ternary compound semiconductor containing sodium, niobium, and sulfur, belonging to the class of mixed-anion metal chalcogenides. This material is primarily of research interest for photocatalytic and optoelectronic applications, where its bandgap and electronic structure may offer advantages in light-driven chemical reactions or photodetection compared to single-phase oxides or sulfides. As a relatively unexplored compound, NaNbO₂S represents a frontier material in the search for earth-abundant semiconductors with tunable properties for energy conversion and environmental remediation.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.800 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.0000644 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.4600 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data