NaInTe₂ is a ternary semiconductor compound combining sodium, indium, and tellurium in a layered crystal structure. This material belongs to the family of chalcogenide semiconductors and is primarily of research interest rather than established industrial production. The compound is being investigated for optoelectronic and photovoltaic applications where its electronic band structure and optical properties could offer advantages in infrared detection, thin-film photovoltaics, or specialized light-emitting devices compared to binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 23.22 | GPa | — | ||
Poisson's Ratio(ν) | -0.7800 | - | — | ||
Shear Modulus(G) | 9.990 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.183 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.600 | eV | — | ||
| ↳ | 0.8400 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 37.73 | - | — | ||
| ↳ | 15.62 range 10.44–20.79median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -111.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.5953 | eV/atom | — |