NaInSnS4 is a quaternary sulfide semiconductor compound combining sodium, indium, tin, and sulfur into a direct or near-direct bandgap material. This is a research-phase compound investigated for thin-film photovoltaic and optoelectronic applications, particularly as an earth-abundant alternative to conventional cadmium telluride (CdTe) or copper indium gallium selenide (CIGS) solar cells. The material's appeal lies in its use of more abundant elements than indium selenides and potential for tunable band structure, though it remains largely in developmental stages without widespread commercial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.400 | eV | — |