Sodium indium nitride (NaInN) is a ternary ceramic compound belonging to the metal nitride family, synthesized primarily for research into wide-bandgap semiconductors and photonic materials. The material is still largely experimental rather than established in commercial production; it is studied as a potential candidate for optoelectronic devices, deep-UV applications, and high-temperature semiconductors due to the favorable properties of indium nitride-based systems. Engineers would consider this material in early-stage research contexts exploring alternatives to conventional GaN or InN for next-generation power electronics, high-frequency devices, or UV light emission where ternary doping strategies might enable performance gains.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1622 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.9710 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2232 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.06532 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data