NaGaO₂N is an experimental oxynitride ceramic compound combining sodium, gallium, oxygen, and nitrogen elements. This material belongs to the emerging class of wide-bandgap semiconductors and functional ceramics being investigated for optoelectronic and photocatalytic applications. While not yet established in high-volume industrial production, compounds in this material family are of research interest for next-generation light-emitting devices, photovoltaics, and visible-light photocatalysts due to their tunable electronic properties relative to conventional oxide or nitride ceramics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 3.000 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.020 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data