NaGaN₃ is an experimental ceramic compound belonging to the family of metal gallium nitrides, synthesized primarily for research into novel nitride materials and their functional properties. While not yet established in mainstream industrial production, this material is of interest to researchers investigating high-temperature ceramics, wide-bandgap semiconductors, and advanced nitride systems; the sodium-gallium-nitrogen chemistry represents an emerging area with potential applications in next-generation electronic and thermal management systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 4.988 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 2.160 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data