NaBiSe₂ is a ternary semiconductor compound combining sodium, bismuth, and selenium in a layered crystal structure, belonging to the family of mixed-metal chalcogenides. This is primarily a research material under investigation for next-generation optoelectronic and thermoelectric applications, with potential advantages in bandgap tuning and thermal properties compared to binary semiconductors. The material shows promise in contexts where bismuth-based compounds are valued for their spin-orbit coupling effects and environmental stability relative to lead-based alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 7,264.9 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2800 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 4,370 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2223 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)4 entries | 0.2800 | eV | Measured | ||
| ↳ | 0.3500 | eV | Measured | ||
| ↳ | 1.101 | eV | DFT · OptB88vdW | ||
| ↳ | 1.693 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 12.68 | - | DFT · OptB88vdW | ||
| ↳ | 9.457 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 29.30 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1176 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6828 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data