NaBiSe₂ is a ternary semiconductor compound combining sodium, bismuth, and selenium in a layered crystal structure, belonging to the family of mixed-metal chalcogenides. This is primarily a research material under investigation for next-generation optoelectronic and thermoelectric applications, with potential advantages in bandgap tuning and thermal properties compared to binary semiconductors. The material shows promise in contexts where bismuth-based compounds are valued for their spin-orbit coupling effects and environmental stability relative to lead-based alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 50.09 | GPa | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 30.13 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.154 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 0.3500 | eV | — | ||
| ↳ | 0.2800 | eV | — | ||
| ↳ | 0.02200 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -166.6 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1176 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6828 | eV/atom | — |