NaAsSe₂ is a ternary semiconductor compound composed of sodium, arsenic, and selenium, belonging to the class of chalcogenide semiconductors with potential for optoelectronic and photovoltaic applications. This material remains primarily in the research phase, studied for its electronic band structure and light-absorption properties relevant to next-generation solar cells and infrared detectors. Engineers would evaluate this compound as an alternative to more conventional semiconductors in niche applications where its specific optical and electrical characteristics—dictated by its unique elemental combination—offer advantages in sensitivity, tunability, or cost for specialized sensing or energy-conversion devices.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 25.49 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2600 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 16.07 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.749 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.520 | eV | Measured | ||
| ↳ | 0.9550 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 11.40 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1655 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4167 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data