NaAsS₂ is a ternary semiconductor compound combining sodium, arsenic, and sulfur in a layered crystal structure. This material belongs to the family of metal chalcogenide semiconductors and remains primarily in research and development phase, with limited commercial deployment. It is of interest in optoelectronic and photovoltaic applications due to its direct bandgap characteristics and potential for thin-film device fabrication, though it faces challenges related to arsenic toxicity and material stability compared to more widely adopted III-V or II-VI semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,334.4 | ksi | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 1,797 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1044 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.230 | eV | — | ||
| ↳ | 1.271 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -195.3 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6887 | eV/atom | — |