NaAlAs is a ternary intermetallic compound combining sodium, aluminum, and arsenic elements. This material belongs to the family of III-V semiconductor precursors and intermetallic phases, though it is primarily of research and theoretical interest rather than established industrial production. NaAlAs appears in materials science literature as a compound of potential interest for semiconductor physics studies and thin-film deposition research, though practical applications remain limited compared to binary III-V semiconductors like GaAs or AlAs that dominate the optoelectronics and RF device industries.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 30.18 | GPa | — | ||
Poisson's Ratio(ν) | 0.4400 | - | — | ||
Shear Modulus(G) | 6.430 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.941 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.2120 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.3042 | eV/atom | — |