Na4Zn2Ge2O8 is an inorganic oxide semiconductor compound belonging to the family of complex metal germanates with potential applications in optoelectronics and photocatalysis. This material remains primarily in the research phase, where it is investigated for its semiconducting properties and structural characteristics that may enable photocatalytic degradation of pollutants or light-emission applications. The combination of alkaline earth and transition metal oxides in this composition makes it notable for exploring band-gap engineering and photocatalytic efficiency compared to simpler single-oxide semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 76.60 | GPa | — | ||
Shear Modulus(G) | 29.60 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.780 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.861 | eV/atom | — |