Na₄V₂B₂As₂O₁₄ is an inorganic compound combining vanadium, boron, and arsenic oxides in a mixed-metal oxide framework—a composition class with semiconductor potential that has seen limited commercial deployment. This material belongs to an experimental family of multivalent oxide semiconductors studied primarily in research settings for electronic and photonic applications where complex mixed-metal coordination offers tunable electronic properties. The arsenic-containing composition and polymetallic structure position it as a research material for niche semiconductor applications rather than established industrial use.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00100 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.004 | eV/atom | — |