Na₄Mn₂As₂C₂O₁₄ is a complex mixed-valence oxyanion semiconductor compound containing sodium, manganese, arsenic, and carbon in a structured crystal lattice. This is an experimental/research material studied primarily for its electronic structure and potential electrochemical properties rather than established industrial production. Materials in this family are of interest to the condensed matter physics and materials chemistry communities for understanding semiconductor behavior in polymetallic oxide systems, with potential relevance to energy storage, catalysis, or electronic device applications if viable synthesis routes can be developed.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4405 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.666 | eV/atom | — |