Na2ZnSn2S6 is a quaternary sulfide semiconductor compound combining sodium, zinc, and tin in a sulfide matrix, belonging to the family of multinary chalcogenide semiconductors. This is primarily a research-phase material investigated for photovoltaic and optoelectronic applications, where its tunable bandgap and earth-abundant constituent elements (tin and zinc) offer potential advantages over conventional semiconductors like CdTe or CIGS in cost and toxicity. The material's appeal lies in its use of non-toxic, relatively abundant elements compared to traditional thin-film photovoltaics, though it remains under development and has not achieved widespread industrial deployment.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1153 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.590 | eV | DFT · OptB88vdW | ||
| ↳ | 2.930 | eV | Measured | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00440 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.7783 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data