Na2Zn3GeAs4 is a ternary ceramic compound belonging to the family of zinc-based chalcogenide and pnictide materials, synthesized primarily for research and materials science applications. This compound is of experimental interest for optoelectronic and semiconductor device development, where its combination of elements offers potential for tunable bandgap properties and photonic applications. It represents an emerging materials platform in the broader context of complex ceramic semiconductors used to explore novel combinations of electrical, optical, and thermal functionalities beyond what conventional binary or simpler ternary systems provide.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.609 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.01300 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 5.840 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01740 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.3128 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data