Na2Sn2N2 is an experimental ternary nitride semiconductor compound combining sodium, tin, and nitrogen elements. This material belongs to the family of metal nitride semiconductors, which are of significant research interest for next-generation optoelectronic and photovoltaic applications due to their wide bandgap characteristics and tunable electronic properties. While not yet in widespread commercial production, compounds in this materials family are being investigated for potential use in high-efficiency solar cells, UV-visible light emitters, and high-temperature electronic devices as alternatives to conventional III-V semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 8,235 | ksi | — | ||
Shear Modulus(G) | 5,611.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.156 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1990 | eV/atom | — |