Na₂In₂Te₄ is a quaternary semiconductor compound combining sodium, indium, and tellurium in a layered crystal structure, belonging to the family of chalcogenide semiconductors with potential applications in optoelectronics and thermoelectrics. This material is primarily of research and development interest rather than established in high-volume production; it is investigated for its tunable bandgap, ionic conductivity, and potential use in next-generation photovoltaic devices, solid-state batteries, and mid-infrared detectors where the combination of cation (Na⁺, In³⁺) and anion (Te²⁻) behavior offers advantages over binary or ternary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,368.1 | ksi | — | ||
Shear Modulus(G) | 1,449.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.8397 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5950 | eV/atom | — |