Sodium manganese diselenide (NaMnSe₂) is a ternary layered semiconductor compound combining alkali metal, transition metal, and chalcogen elements. This material is primarily of research interest for its potential in optoelectronic and energy storage applications, particularly within the broader class of layered metal chalcogenides that exhibit tunable electronic properties and promise for next-generation photovoltaics, photodetectors, and thermoelectric devices. The combination of manganese and selenium provides opportunities to engineer bandgap and carrier mobility for semiconductor device applications, though industrial-scale production and deployment remain limited compared to established alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,152.9 | ksi | — | ||
Shear Modulus(G) | 1,557.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03130 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5450 | eV/atom | — |