This is a mixed-metal oxide compound containing cobalt and lead within a potassium-nitrogen-oxygen framework, classified as a semiconductor material. The compound represents an experimental or specialty composition likely explored for its electronic and photocatalytic properties, combining transition metal (Co) and post-transition metal (Pb) dopants in a host lattice. Materials in this family are typically investigated for photocatalysis, optoelectronic devices, or as functional ceramics where engineered band gaps and charge-carrier properties are needed.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00800 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7390 | eV/atom | — |