N4O8 is an experimental nitrogen-oxygen compound classified as a semiconductor, likely representing a nitride or oxynitride ceramic material with potential applications in advanced electronic and optoelectronic devices. While not a mainstream commercial material, compounds in this chemical family are of significant research interest for their tunable electronic properties and potential use in next-generation semiconductors where conventional materials face performance limits. The material's semiconductor classification suggests it could bridge functionality gaps in high-temperature electronics, photovoltaic systems, or wide-bandgap device applications where thermal stability and chemical inertness are critical.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,771.1 | ksi | — | ||
Shear Modulus(G) | 1,068.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.518 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1830 | eV/atom | — |