Ta4O4N4 is an experimental tantalum oxynitride semiconductor compound currently under investigation for advanced electronic and photocatalytic applications. This material belongs to the transition metal oxynitride family, which bridges the properties of oxides and nitrides to achieve tunable electronic structures and enhanced functional performance. While not yet commercialized at scale, tantalum oxynitrides are being researched for next-generation devices where the combination of mechanical stiffness and semiconductor behavior could enable new capabilities in harsh or demanding environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 227.4 | GPa | — | ||
Shear Modulus(G) | 80.99 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.256 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.071 | eV/atom | — |