N4 O2 Ge4

semiconductor

· N4 O2 Ge4

N4O2Ge4 is an experimental nitride-oxide germanium compound that belongs to the broader family of mixed-anion semiconductors combining nitrogen, oxygen, and germanium. This material is primarily of research interest rather than established industrial production, with potential applications in advanced semiconductor devices where the combination of nitrogen and oxygen doping in a germanium matrix could modify electronic and optical properties. The mixed-anion approach represents an emerging strategy to engineer bandgaps and carrier transport in next-generation wide-bandgap or narrow-bandgap semiconductors, making it notable for exploratory device architectures where conventional binary or ternary semiconductors prove limiting.

Research semiconductorsWide-bandgap device engineeringElectronic band structure tuningExperimental optoelectronicsAdvanced materials developmentNext-generation power electronics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	76.68	GPa	—
Shear Modulus(G)	62.55	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.701	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.5720	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

N4 O2 Ge4

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control