N4 O10
semiconductorN₄O₁₀ is an experimental nitrogen-oxygen compound classified as a semiconductor, likely representing a mixed-valence nitrogen oxide or oxynitride phase. This material belongs to the broader family of nitrogen oxides and oxynitrides, which are of significant research interest for their potential electronic and photochemical properties, though N₄O₁₀ specifically remains in the early-stage investigation phase. The rigid mechanical structure (as indicated by its elastic moduli) suggests potential applications in structural semiconductor contexts, though industrial deployment would depend on demonstrating stability, band gap engineering, and scalable synthesis routes compared to more established wide-bandgap semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | Pa | — | — | |
Shear Modulus(G) | — | Pa | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |